D. Pantelica, G. Drafta, C. Borcan, D. Diaconescu, M. Buda, R. Ghiţă
{"title":"RBS analysis of Au/Cr contact on GaAs","authors":"D. Pantelica, G. Drafta, C. Borcan, D. Diaconescu, M. Buda, R. Ghiţă","doi":"10.1109/SMICND.1996.557406","DOIUrl":null,"url":null,"abstract":"This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical /spl alpha/ particles with /sup 7/Li ions. This allows a great improvement in depth and mass resolution.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical /spl alpha/ particles with /sup 7/Li ions. This allows a great improvement in depth and mass resolution.