Properties of iron disilicide doped with Ru, Rh and Pd

M. Fedorov, M. Khazan, A. Kaliazin, V. Zaitsev, N. F. Kartenko, A.E. Engelychev
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引用次数: 1

Abstract

This paper shows the results of a study of electrical resistivity and thermopower of semiconductor iron disilicide /spl beta/-FeSi/sub 2/ doped with Ru, Rh and Pd in the temperature range 300-1000 K. Polycrystalline samples for measurement were prepared by the vacuum-casting method. The limits of each dopant solubility in iron disilicide were estimated by X-ray diffraction measurements. It is shown that if non-band conductivity mechanism takes place in pure iron disilicide, the addition of the heavy metals results in change of conductivity mechanism. The results obtained are discussed from the point of optical phonon drag effect.
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钌、铑和钯掺杂二硅化铁的性能
本文研究了钌、铑和钯掺杂的半导体二硅化铁/spl β /-FeSi/sub 2/在300-1000 K温度范围内的电阻率和热功率。采用真空铸造法制备了多晶样品。用x射线衍射法测定了各掺杂剂在二硅化铁中的溶解度。结果表明,如果纯二硅化铁发生非带电导率机制,则重金属的加入会导致电导率机制的改变。从光学声子拖拽效应的角度对所得结果进行了讨论。
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