A novel voltage-controlled grounded resistor using FGMOS technique

Abstract

This paper proposes a novel Floating gate MOSFET (FGMOS) based voltage-controlled grounded resistor (VCGR). The FGMOS is used to cancel the nonlinearity term present in the drain current equation of MOSFET operating in ohmic region. The implementation of nth order tunable high-pass filter using the proposed VCGR is also suggested. The proposed VCGR is simple, compact, accurate, and with low power dissipation of 2.61µW. The circuits are simulated using SPICE for 0.5µm CMOS technology to demonstrate the effectiveness of the circuits.