D. Gachon, G. Lengaigne, L. Gauthier-Manuel, V. Laude, S. Ballandras
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引用次数: 3
Abstract
Bulk acoustic waves excited in thin piezoelectric films have revealed their capabilities for addressing the problem of high frequency RF filters (above 1 GHz). In this paper, we propose an alternative to thin film deposition consisting in single crystal wafers bonded on a substrate (for instance silicon or glass) and thinned, allowing for plate thickness close to 10 mum. This has been achieved on 3 inches wafers and allows for an accurate selection of the wave characteristics. More, the properties of the piezoelectric material are found conform with tabulated values, enabling one to reliably design any passive signal processing device
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