Position and Size-Controlled Photosynthesis of Silicon Nanocrystals in SiO2Films

C. Chen, S. Kimura, S. Sen, S. Nozaki, H. Ono, K. Uchida, H. Morisaki
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Abstract

The SiOxthin film made of the SiOxnanoparticles (~40, gm) shows a strong reaction to laser irradiation. The photosynthesis of silicon (Si) nanocrystals (NC's) is found to be self-limited to the laser power and exposure time. Furthermore, the laser irradiation of the SiOxfilm not only produces Si NC's, also transforms the SiOxfilm from the powder-like to the continuous. The photosynthesis of Si NC's has several advantages such as low-temperature process and good control in the size and positioning over the conventional synthesis methods and has many potential applications.
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二氧化硅薄膜中硅纳米晶体位置和尺寸控制的光合作用
纳米二氧化硅纳米颗粒(~40,gm)对激光辐照表现出强烈的反应。硅纳米晶体的光合作用受激光功率和曝光时间的限制。此外,激光辐照SiOxfilm不仅产生Si NC,而且使SiOxfilm从粉末状转变为连续状。与传统的合成方法相比,Si NC的光合作用具有低温过程、尺寸和定位控制好等优点,具有广阔的应用前景。
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