Detection sensitivity of genetic field effect transistor combined with charged nanoparticle-DNA conjugate

Abstract

We demonstrated the effectiveness of introduction of charged nanoparticle-DNA conjugate for detection sensitivity of the genetic field effect transistor (FET), of which the principle is based on the potentiometric detection of charge density change on the gate surface. The large amount of negative charges on the gate insulator induced strongly the electrostatic interaction with electrons in silicon crystal by field effect resulting in the bigger shift of threshold voltage. The genetic FET platform combined with the charged nanoparticle-DNA conjugate is suitable for a simple, sensitive, accurate and inexpensive system for DNA analyses in clinical diagnostics