Modification of detection process on ZnO sensors by ultraviolet radiation

Jakub Napravnik, V. Myslík, M. Vrňata, F. Vysloužil, P. Fitl, Dušan Kopecký, J. Vlcek
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Abstract

The contribution deals with influence of radiation in the near UV region (λ = 396 nm) on detection properties of conductive type gas sensors. The ZnO active layers of the sensors were deposited on Alumina substrates by Pulsed Laser Deposition method. Resulting thickness of active layers was ∼ 450 nm. The dc-sensitivity was evaluated from resistance change under exposition of hydrogen and acetone and toluene vapours in synthetic air. The sensitivity to acetone was doubled using the UV radiation at 250°C.
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紫外辐射对氧化锌传感器检测工艺的改进
研究了近紫外区(λ = 396 nm)辐射对导电型气体传感器检测性能的影响。采用脉冲激光沉积法将传感器的氧化锌有源层沉积在氧化铝衬底上。得到的活性层厚度为~ 450 nm。从合成空气中氢气、丙酮和甲苯蒸气暴露时的电阻变化来评价直流灵敏度。在250°C的紫外辐射下,对丙酮的灵敏度提高了一倍。
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