Bridgman growth and characterization of the structure ordered CTGS single crystal

He-wei Wang, F. Yu, Shuai Hou, Feifei Chen, Jie Zhan, Xian Zhao
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Abstract

Structural ordered langasite-type piezoelectric crystal Ca3Ta G a 3Si2O14(CTGS) possess excellent high temperature piezoelectric properties. In this work, large size(25mm in diameter and 80mm in length)CTGS single crystalswere grown by using the vertical Bridgman method. High resolution X-ray diffraction technique was applied to characterize the crystal quality, where the as-grown CTGS crystals were found to show low FWHM value, being on the order of<;50", indicating the high quality of the CTGS crystals. In addition, the temperature dependent behaviours for the elastic and piezoelectric properties were investigated from 20°C to 900°C, where piezoelectric coefficient d11(-d12) was found to increase with temperature with variation less than 30%, while the variation of the elastic compliance s22 was obtained to be <;10% over the test temperature range, similar to the CTGS crystals grown by using Czochralski method. All these results indicated that Bridgman method is an alternative to Czochralski method for high quality CTGS crystal growth.
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结构有序CTGS单晶的Bridgman生长与表征
结构有序的langasite型压电晶体Ca3Ta G a 3Si2O14(CTGS)具有优异的高温压电性能。本研究采用垂直Bridgman法生长大尺寸(直径25mm,长80mm)CTGS单晶。采用高分辨率x射线衍射技术对晶体质量进行表征,发现生长CTGS晶体的FWHM值较低,约为<;50”,表明CTGS晶体质量较高。此外,在20℃至900℃范围内,研究了弹性和压电性能的温度依赖行为,其中压电系数d11(-d12)随温度的增加而增加,变化幅度小于30%,而弹性柔度s22的变化幅度小于10%,与用Czochralski法生长的CTGS晶体相似。这些结果表明,Bridgman法可以替代Czochralski法生长高质量的CTGS晶体。
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