Yang Huang, Fanyu Liu, Binhong Li, Bo Li, Jiantou Gao, Lei Wang, Xiaohui Su, Hainan Liu, Zhengsheng Han, Jiajun Luo
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引用次数: 0
Abstract
A significant degradation of drain current in Double-SOI pMOSFET is observed after irradiation. The degradation mechanism is analyzed by extracting the related parameters from Y-function. Impact of negative SOI bias on parameter degradation is investigated.
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