Rf-magnetron sputtered ferroelectric (Na,K)NbO/sub 3/ films

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195903

M. Blomqvist, J. Koh, S. Khartsev, A. Grishin

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引用次数: 2

Abstract

Sodium potassium niobate (Na,K)NbO/sub 3/ (NKN) thin films were grown by rf-magnetron sputtering from stoichiometric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ target on LaAlO/sub 3/ (LAO) single crystals and polycrystalline Pt/sub 80/Ir/sub 20/ (PtIr) substrates. NKN films on polycrystalline PtIr substrates were found to be preferentially (00l) oriented while XRD measurements reveal epitaxial quality of NKN/LaAlO/sub 3/ film structures. The ferroelectric state in NKN/PtIr films at room temperature is indicated by polarization loops with polarization as high as 33.4 /spl mu/C/cm/sup 2/ at 700 kV/cm remnant polarization of 9.9 /spl mu/C/cm/sup 2/, and coercive field of 91 kV/cm. I-V characteristics of vertical Au/NKN/PtIr capacitive cells and planar Au/NKN/LAO interdigital capacitors (IDCs) showed very good insulating properties. For NKN IDC the leakage current density was in the order of 30 nA/cm/sup 2/ at 400 kV/cm. Rf dielectric spectroscopy demonstrates low loss, low frequency dispersion, and high voltage tunability both for vertical Au/NKN/PtIr and planar interdigital Au/NKN/LAO capacitors.

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射频磁控溅射铁电(Na,K)NbO/ sub3 /薄膜

以化学计量Na/sub 0.5/K/sub 0.5/NbO/sub 3/靶为基体，在LaAlO/sub 3/ (LAO)单晶和多晶Pt/sub 80/Ir/sub 20/ (PtIr)衬底上采用射频磁控溅射法制备了铌酸钠(Na,K)NbO/sub 3/ (NKN)薄膜。在多晶PtIr衬底上发现NKN薄膜具有优先(00l)取向，而XRD测试表明NKN/LaAlO/sub - 3/薄膜结构具有外延质量。在室温下，NKN/PtIr薄膜的极化环极化率高达33.4 /spl mu/C/cm/sup 2/，残余极化率为9.9 /spl mu/C/cm/sup 2/，矫顽力场为91 kV/cm。垂直Au/NKN/PtIr电容电池和平面Au/NKN/LAO数字间电容(idc)的I-V特性显示出良好的绝缘性能。对于NKN IDC，在400 kV/cm时，泄漏电流密度约为30 nA/cm/sup 2/。对于垂直Au/NKN/PtIr和平面数字间Au/NKN/LAO电容器，Rf介电光谱显示出低损耗、低频色散和高电压可调性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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