High uniformity HgI2 thick film prepared by ultrasonic wave-assisted physical vapor deposition

Abstract

Poly-HgI2 films with an average small grain size of about 50μm were obtained on ITO substrates by ultrasonic wave-assisted vapor deposition method whose deposition temperature can be as low as 40 degree celsius. X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum characterization suggested that the film grew along the (001) crystal plane with uniform grain size. Dark current of the film and its response to X-ray had also been investigated with Au as pixel electrodes, the response uniformity on all 16 pixels is within 10%.