J. Bandler, S. Ye, Q. Cai, R. Biernacki, S.H. Chen
{"title":"Predictable yield-driven circuit optimization","authors":"J. Bandler, S. Ye, Q. Cai, R. Biernacki, S.H. Chen","doi":"10.1109/MWSYM.1992.188118","DOIUrl":null,"url":null,"abstract":"The authors present a comprehensive approach to predictable yield optimization. They utilize a new physics-based statistical GaAs MESFET model which combines the advantages of the DC Khatibzadeh and Trew model and the small-signal Ladbrooke formulas. The yield of a broadband amplifier was significantly improved after optimization. Predicted yield over a range of specifications was verified by device data. The benefits of simultaneous circuit-device yield optimization assisted by yield sensitivity analysis are demonstrated.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The authors present a comprehensive approach to predictable yield optimization. They utilize a new physics-based statistical GaAs MESFET model which combines the advantages of the DC Khatibzadeh and Trew model and the small-signal Ladbrooke formulas. The yield of a broadband amplifier was significantly improved after optimization. Predicted yield over a range of specifications was verified by device data. The benefits of simultaneous circuit-device yield optimization assisted by yield sensitivity analysis are demonstrated.<>
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