Interaction effects between electromagnetic bandgap structures and split ring resonators in microstrip technology

M. Navarro, F. Falcone, T. Lopetegi, M.A. Gomez-Laso, M. Beruete, I. Arnedo, E. Jarauta, J. A. Marcotegui, M. Sorolla
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引用次数: 5

Abstract

In this paper interaction effects between electromagnetic bandgap (EBG) and an array of split ring resonators are analyzed in planar microstrip technology. Due to the equivalent negative epsi behavior of the EBG structure and the effective negative mu value when the SRR particles are operating in the vicinity of the quasi-static resonance frequency, a passband response is expected, as already seen in left-handed devices. Full wave simulations as well as measurement results from fabricated prototypes are presented, confirming initial predictions
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微带技术中电磁带隙结构与劈环谐振器的相互作用效应
本文分析了平面微带技术中电磁带隙(EBG)与裂环谐振器阵列的相互作用效应。由于EBG结构的等效负epsi行为和SRR粒子在准静态共振频率附近工作时的有效负mu值,预计会出现通带响应,正如在左手器件中已经看到的那样。给出了全波模拟和制造原型的测量结果,证实了最初的预测
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