Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

IF 1 Q3 PHYSICS, MULTIDISCIPLINARY East European Journal of Physics Pub Date : 2023-09-04 DOI:10.26565/2312-4334-2023-3-10
Ulugbek I. Erkaboev, Rustamjon G. Rakhimov
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Abstract

In this work, the influence of two-dimensional state density on oscillations of transverse electrical conductivity in heterostructures with rectangular quantum wells is investigated. A new analytical expression is derived for calculating the temperature dependence of the transverse electrical conductivity oscillation and the magnetoresistance of a quantum well. For the first time, a mechanism has been developed for oscillating the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential) at low temperatures and weak magnetic fields. The oscillations of electrical conductivity and magnetoresistance of a narrow-band quantum well with a non-parabolic dispersion law are investigated. The proposed theory investigated the results of experiments of a narrow-band quantum well (InxGa1-xSb).
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基于量子阱测定异质结构中横向电导率和磁阻振荡对温度的依赖性
本文研究了二维态密度对矩形量子阱异质结构中横向电导率振荡的影响。导出了计算量子阱横向电导率振荡与磁阻的温度依赖性的解析表达式。在低温和弱磁场条件下,首次建立了一种由磁场一阶导数(微分)振荡量子阱横向电导率和磁阻的机制。研究了非抛物色散规律下窄带量子阱的电导率和磁阻振荡。该理论研究了窄带量子阱(InxGa1-xSb)的实验结果。
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来源期刊
East European Journal of Physics
East European Journal of Physics PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.10
自引率
25.00%
发文量
58
审稿时长
8 weeks
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