Neutralization of the Surface Charge of an Insulated Target under the Interaction of High-Energy Metal Ion Beams

Abstract

The interaction of ion beams with dielectric materials is an urgent problem, both from the point of view of practical application in ion implantation processes and for understanding the fundamental processes of charge compensation and the effective interaction of beam ions with a target surface. This paper presents the results of studies of the processes of compensation of the surface charge of an insulated collector upon interaction with a beam of metal ions with energies up to 50–150 keV. At low pressure (about 10−6 torr), removing the collector from the region of extraction and beam formation makes it possible to reduce the floating potential to a value of 5–10% of the total accelerating voltage. This phenomenon allows for the efficient implantation of metal ions onto the surface of alumina ceramics. We have shown that the sheet resistance of dielectric targets depends on the material of the implanted metal ions and decreases with an increase in the implantation dose by 3–4 orders of magnitude compared with the initial value at the level of 1012 Ω per square.