Optical and photoconductivity properties of Mn doped nanocrystalline PbS thin films deposited by chemical bath deposition method

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-11-01 DOI:10.15251/cl.2023.2011.821
L. R. Singh, R. K. L. Singh, M. A. Hussain
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Abstract

Mn doped nanocrystalline PbS thin films were deposited onto glass substrates by chemical bath deposition (CBD) method. All the deposited thin films were found to be crystalline having cubic phase structure. The optical properties of the Mn doped nanocrystalline PbS thin films have been studied. They have high absorbance in the UV-visible region. The linear nature of (αhν)2 vs (hν) plots of PbS thin films confirmed that the transition is direct and the optical band gap energy of PbS films is found to increase from 1.90 eV to 2.28 eV with decreasing crystallite size from 21 nm to 11 nm and the optical band gap values are higher than the bulk value (0.40 eV). The optical band gap of Mn doped PbS films are found to increase with increase in dopant concentrations. The Photoconductive rise time and decay time determined from the prepared films are found to decrease with increase in doping concentrations.
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化学沉积法沉积的掺锰纳米晶 PbS 薄膜的光学和光电导特性
采用化学浴沉积(CBD)法在玻璃基底上沉积了掺锰纳米结晶铅酸电池薄膜。所有沉积薄膜均为晶体,具有立方相结构。研究了掺锰纳米晶 PbS 薄膜的光学特性。它们在紫外-可见光区域具有很高的吸光度。PbS 薄膜的 (αhν)2 vs (hν) 图的线性性质证实了转变是直接的,并且发现随着晶体尺寸从 21 nm 减小到 11 nm,PbS 薄膜的光带隙能从 1.90 eV 增加到 2.28 eV,光带隙值高于块体值(0.40 eV)。掺杂锰的 PbS 薄膜的光带隙随掺杂浓度的增加而增大。根据制备的薄膜测定的光电导上升时间和衰减时间随着掺杂浓度的增加而缩短。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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