Perturbative variational quantum algorithms for material simulations

Jie Liu, Zhenyu Li, Jinlong Yang
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Abstract

Reducing circuit depth is essential for implementing quantum simulations of electronic structure on near-term quantum devices. In this work, we propose a variational quantum eigensolver (VQE) based perturbation theory algorithm to accurately simulate electron correlation of periodic materials with shallow ansatz circuits, which are generated from Adaptive Derivative-Assembled Pseudo-Trotter or Qubit-Excitation-based VQE calculations using a loose convergence criteria. Here, the major part of the electron correlation is described using the VQE ansatz circuit and the remaining correlation energy is described by either multireference or similarity transformation-based perturbation theory. Numerical results demonstrate that the new algorithms are able to accurately describe electron correlation of the LiH crystal with only one circuit parameter, in contrast with ~30 parameters required in the adaptive VQE to achieve the same accuracy. Meanwhile, for fixed-depth Ansatze, e.g. unitary coupled cluster, we demonstrate that the VQE-base perturbation theory provides an appealing scheme to improve their accuracy.
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用于材料模拟的惯性变分量子算法
要在近期量子器件上实现电子结构的量子模拟,降低电路深度至关重要。在这项工作中,我们提出了一种基于变分量子等差数列(VQE)的扰动理论算法,利用浅解析电路精确模拟周期性材料的电子相关性,而浅解析电路是利用宽松的收敛标准从基于自适应衍射组装的伪rotter或基于Qubit-Excitation的VQE计算中生成的。在这里,电子相关的主要部分是用 VQE 反演电路来描述的,其余的相关能量则是用多参考或基于相似性变换的扰动理论来描述的。数值结果表明,新算法只需一个电路参数就能准确描述锂辉晶体的电子相关,而自适应 VQE 要达到同样的精度需要约 30 个参数。同时,对于固定深度的安萨特泽,例如单元耦合簇,我们证明了基于 VQE 的扰动理论为提高其精确度提供了一种有吸引力的方案。
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