A. Talukder, Md Tashfiq Bin Kashem, R. Khan, F. Dirisaglik, A. Gokirmak, H. Silva
{"title":"Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures","authors":"A. Talukder, Md Tashfiq Bin Kashem, R. Khan, F. Dirisaglik, A. Gokirmak, H. Silva","doi":"10.1149/2162-8777/ad2332","DOIUrl":null,"url":null,"abstract":"\n We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70 – 100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5 – 2.5 V pulses with ~50 – 100 ns duration leading to ~0.4 – 1.1 mA peak reset currents resulting in amorphized lengths between ~50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 hour duration. Drift coefficients range between ~0.02 and 0.1 with significant device-to-device variability and variations during the measurement period. At lower temperatures (higher resistance states) some devices show a complex dynamic behavior, with the resistance repeatedly increasing and decreasing significantly over periods in the order of seconds. These results point to charge trapping and de-trapping events as the cause of resistance drift.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad2332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70 – 100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5 – 2.5 V pulses with ~50 – 100 ns duration leading to ~0.4 – 1.1 mA peak reset currents resulting in amorphized lengths between ~50 and 700 nm. Resistance drift coefficients in the amorphized cells are calculated using constant voltage measurements starting as fast as within a second after amorphization and for 1 hour duration. Drift coefficients range between ~0.02 and 0.1 with significant device-to-device variability and variations during the measurement period. At lower temperatures (higher resistance states) some devices show a complex dynamic behavior, with the resistance repeatedly increasing and decreasing significantly over periods in the order of seconds. These results point to charge trapping and de-trapping events as the cause of resistance drift.