Nanomaterial integration in micro LED technology: Enhancing efficiency and applications

Raghvendra Kumar Mishra , Kartikey Verma , Iva Chianella , Saurav Goel , Hamed Yazdani Nezhad
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Abstract

The micro-light emitting diode (µLED) technology is poised to revolutionise display applications through the introduction of nanomaterials and Group III-nitride nanostructures. This review charts state-of-the-art in this important area of micro-LEDs by highlighting their key roles, progress and concerns. The review encompasses details from various types of nanomaterials to the complexity of gallium nitride (GaN) and III nitride nanostructures. The necessity to integrate nanomaterials with III-nitride structures to create effective displays that could disrupt industries was emphasised in this review. Commercialisation challenges and the economic enhancement of micro-LED integration into display applications using monolithic integrated devices have also been discussed. Furthermore, different approaches in micro-LED development are discussed from top-down and bottom-up approaches. The last part of the review focuses on nanomaterials employed in the production of micro-LED displays. It also highlights the combination of III-V LEDs with silicon LCDs and perovskite-based micro-LED displays. There is evidence that efficiency and performance have improved significantly since the inception of the use of nanomaterials in manufacturing these.

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微型 LED 技术中的纳米材料集成:提高效率和应用
通过引入纳米材料和 III 族氮化物纳米结构,微型发光二极管 (µLED) 技术有望彻底改变显示应用。本综述通过强调微型发光二极管的关键作用、进展和问题,描绘了这一重要领域的最新进展。综述涵盖了从各种类型的纳米材料到氮化镓(GaN)和 III 族氮化物纳米结构的复杂性等详细信息。本综述强调了将纳米材料与 III 族氮化物结构相结合,以创造可颠覆行业的有效显示器的必要性。此外,还讨论了使用单片集成器件将微型 LED 集成到显示应用中的商业化挑战和经济效益提升问题。此外,还讨论了自上而下和自下而上开发微型 LED 的不同方法。综述的最后一部分侧重于生产微型 LED 显示器所采用的纳米材料。它还重点介绍了 III-V LED 与硅液晶显示器和基于包晶的微型 LED 显示器的结合。有证据表明,自从开始使用纳米材料生产这些产品以来,效率和性能都有了显著提高。
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