Concentration Profile of the Gallium and Antimony Impurities in the Ge1–x–Six〈Ga〉 and Ge1–x–Six〈Sb〉 Crystals Grown by the Hybrid Method

IF 0.5 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Inorganic Materials: Applied Research Pub Date : 2024-05-23 DOI:10.1134/s2075113324010295

Z. M. Zakhrabekova, V. K. Kyazimova, E. M. Islamzade, A. I. Alekperov

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Abstract

The doped crystals of the Ge_1–x–Si_x〈Ga〉 and Ge_1–x–Si_x〈Sb〉 solid solutions have been prepared by the hybrid method. The Hall measurements have been carried out on the samples at room temperature, from which the distributions of gallium and antimony impurities along the prepared crystals of Ge_1–x–Si_x〈Ga〉 and Ge_1–x–Si_x〈Sb〉, respectively, have been determined experimentally. At the same time, in the Pfann approximation, the one-dimensional problem on the axial distribution of the gallium and antimony impurities in crystals of the Ge–Si solid solutions grown by the hybrid method has been solved. The results obtained demonstrate good agreement between experimental and calculated data. This fact allows us to conclude, that mathematical modeling gives an opportunity to control, over a wide range, the concentration profile of impurities in the Ge–Si crystals grown by this method by changing the starting concentrations of impurities and creating the respective gradient of temperature in the melt in the section of crystal growth by the directional constitutional supercooling of the melt method and the ratio of the replenishment and crystallization rates of the melt in the section of the homogeneous crystal growth.

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混合法生长的 Ge1-x-Six〈镓〉和 Ge1-x-Six〈锑〉晶体中镓和锑杂质的浓度分布图

摘要采用混合法制备了掺杂的 Ge1-x-Six〈镓〉和 Ge1-x-Six〈锑〉固溶体晶体。在室温下对样品进行了霍尔测量，并通过实验分别确定了镓和锑杂质在所制备的 Ge1-x-Six〈Ga〉和 Ge1-x-Six〈Sb〉晶体上的分布。同时，在 Pfann 近似中，解决了混合法生长的 Ge-Si 固溶体晶体中镓和锑杂质轴向分布的一维问题。结果表明，实验数据和计算数据非常吻合。这一事实使我们得出结论，数学建模提供了一个机会，通过改变杂质的起始浓度，在晶体生长段的熔体中通过熔体的定向立宪过冷法形成相应的温度梯度，以及在均匀晶体生长段的熔体补充率和结晶率的比率，在很大范围内控制通过这种方法生长的锗硅晶体中杂质的浓度分布。

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来源期刊

Inorganic Materials: Applied Research Engineering-Engineering (all)

CiteScore

0.90

自引率

0.00%

发文量

199

期刊介绍： Inorganic Materials: Applied Research contains translations of research articles devoted to applied aspects of inorganic materials. Best articles are selected from four Russian periodicals: Materialovedenie, Perspektivnye Materialy, Fizika i Khimiya Obrabotki Materialov, and Voprosy Materialovedeniya and translated into English. The journal reports recent achievements in materials science: physical and chemical bases of materials science; effects of synergism in composite materials; computer simulations; creation of new materials (including carbon-based materials and ceramics, semiconductors, superconductors, composite materials, polymers, materials for nuclear engineering, materials for aircraft and space engineering, materials for quantum electronics, materials for electronics and optoelectronics, materials for nuclear and thermonuclear power engineering, radiation-hardened materials, materials for use in medicine, etc.); analytical techniques; structure–property relationships; nanostructures and nanotechnologies; advanced technologies; use of hydrogen in structural materials; and economic and environmental issues. The journal also considers engineering issues of materials processing with plasma, high-gradient crystallization, laser technology, and ultrasonic technology. Currently the journal does not accept direct submissions, but submissions to one of the source journals is possible.