Study the Effect of Ion Doping on ZnO Nanostructures for Room Temperature NH3 Gas Sensor

Abstract

We investigated the impact of doping ion type on the performance of a ZnO-based ammonia gas sensor to show the capability of these ions to achieve high-performance gas sensing at room temperature. A sol-gel method was used to synthesize both doped and undoped ZnO nanostructures, while the gas sensor device was made by casting ZnO onto a glass substrate for uniform thin film. Then Al electrodes were attached to the film. The characterization was carried out via field-emission scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction, UV-VIS, Pl luminescence, Brunnauer-Emmett-Teller, I-V characteristic, and gas sensor setup device. PL measurement shows an increase in green emission spectra with Ba ion shifting the peaks from VO to VO+ and VO+ to VO++ states. The gas sensor test conducted at room temperature shows great enhancement in performance for certain ions. The Ba ions greatly influence gas sensor performance, increasing the response to 24 compared to 5 for undoped ZnO. The room-temperature enhancement achieved by the Ba ions could open the way to investigate more effective dopants for NH3 gas sensors.