Participation of Defects Localized at Heterointerfaces and Extended Defects in the Degradation of Nitride-Based Light-Emitting Devices

IF 0.8 4区 物理与天体物理 Q4 OPTICS Optics and Spectroscopy Pub Date : 2024-08-07 DOI:10.1134/S0030400X24020176
N. A. Talnishnikh, A. E. Ivanov, E. I. Shabunina, N. M. Shmidt
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Abstract

A decrease in external quantum efficiency (EQE) of commercial LEDs based on MQW InGaN/GaN at wavelengths of 445, 530 and MQW AlGaN/GaN at 280 nm was experimentally studied in the standard aging mode at direct current. The decrease in EQE (regardless of the radiation wavelength) is found out to occur due to cooperative phenomena developing in 1–2 quantum wells (QWs) located in the space charge region (SCR) around the pn junction, as well as in most of the QWs outside of SCR. It is shown that the inhomogeneous flow of current in these regions leads not only to the transformation of defects localized at heteroboundaries in the SCR and in lateral inhomogeneities in the alloy composition outside of SCR as well as in the extended defects, but also to a change in the alloy composition.

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异质界面局部缺陷和扩展缺陷对氮化物发光器件降解的影响
摘要 在直流电的标准老化模式下,对基于 MQW InGaN/GaN(波长为 445、530)和 MQW AlGaN/GaN(波长为 280 nm)的商用 LED 的外部量子效率(EQE)下降进行了实验研究。研究发现,EQE 的降低(与辐射波长无关)是由于位于 p-n 结周围空间电荷区 (SCR) 的 1-2 个量子阱 (QW) 以及 SCR 以外的大多数 QW 中产生的协同现象造成的。研究表明,这些区域中的不均匀电流不仅导致 SCR 中异质边界局部缺陷的转变、SCR 外部合金成分的横向不均匀性以及扩展缺陷的转变,而且还导致合金成分的变化。
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来源期刊
Optics and Spectroscopy
Optics and Spectroscopy 物理-光谱学
CiteScore
1.60
自引率
0.00%
发文量
55
审稿时长
4.5 months
期刊介绍: Optics and Spectroscopy (Optika i spektroskopiya), founded in 1956, presents original and review papers in various fields of modern optics and spectroscopy in the entire wavelength range from radio waves to X-rays. Topics covered include problems of theoretical and experimental spectroscopy of atoms, molecules, and condensed state, lasers and the interaction of laser radiation with matter, physical and geometrical optics, holography, and physical principles of optical instrument making.
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