{"title":"Fabrication and dielectric spectroscopy analysis of FeGaInS4/PVA composite materials","authors":"Zeynab Addayeva, Yashar Azizian‐Kalandaragh, Namiq Niftiyev, Goncha Eyvazova, Faik Mammadov, Mahammad Babanly, Mahammad Baghir Baghirov, Mustafa Muradov","doi":"10.1002/vnl.22148","DOIUrl":null,"url":null,"abstract":"<jats:label/>The control of dielectric permittivity and conductivity is a crucial factor in the development of certain electronic components. Materials based on layered structures and polyvinyl alcohol (PVA) show great potential for applications in supercapacitors. Therefore, the creation of polymer composites based on layered semiconductors and the determination of their physical properties is significant. In this investigation, a composite comprising 1 wt% FeGaInS<jats:sub>4</jats:sub> dispersed in PVA was synthesized through mechanical mixing, where the FeGaInS<jats:sub>4</jats:sub> crystal was incorporated into the PVA matrix. This study explores the physical characteristics of this composite for the first time. The structure of the composite was analyzed using x‐ray diffraction (XRD). Electrical properties and conductivity mechanisms were examined using a dielectric spectrometer. It was determined that the hopping model conductivity mechanism predominates in the FeGaInS<jats:sub>4</jats:sub>/PVA nanocomposite. For the 1 wt% FeGaInS<jats:sub>4</jats:sub>/PVA composite, system parameters were calculated at a temperature of 313 K and a frequency of 5 × 10<jats:sup>3</jats:sup> Hz. The parameters found are <jats:italic>s</jats:italic> = 0.814, potential barrier height <jats:italic>W</jats:italic><jats:sub>M</jats:sub> = 0.868 eV, hopping length <jats:italic>R</jats:italic><jats:sub>ω</jats:sub> = 14.7 × 10<jats:sup>−10</jats:sup> m, and the concentration of pairs of states between, which charge carriers hop <jats:italic>N</jats:italic> = 1.396 × 10<jats:sup>26</jats:sup> m<jats:sup>−3</jats:sup>.Highlights<jats:list list-type=\"bullet\"> <jats:list-item>1 wt% FeGaInS4 composite synthesized via mechanical assembly.</jats:list-item> <jats:list-item>Small crystals boost dielectric constant by 1.5× via interfacial polarization.</jats:list-item> <jats:list-item>The system parameters are defined: <jats:italic>s</jats:italic> = 0.814, <jats:italic>W</jats:italic><jats:sub>M</jats:sub> = 0.868 eV, <jats:italic>R</jats:italic><jats:sub>ω</jats:sub> = 14.7 × 10<jats:sup>−10</jats:sup> m.</jats:list-item> <jats:list-item>Electrical conduction is multifaceted; conductance hopping dominates.</jats:list-item> <jats:list-item>Loss tangent decreases due to interfacial polarization effects.</jats:list-item> </jats:list>","PeriodicalId":17473,"journal":{"name":"Journal of Vinyl and Additive Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vinyl and Additive Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/vnl.22148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The control of dielectric permittivity and conductivity is a crucial factor in the development of certain electronic components. Materials based on layered structures and polyvinyl alcohol (PVA) show great potential for applications in supercapacitors. Therefore, the creation of polymer composites based on layered semiconductors and the determination of their physical properties is significant. In this investigation, a composite comprising 1 wt% FeGaInS4 dispersed in PVA was synthesized through mechanical mixing, where the FeGaInS4 crystal was incorporated into the PVA matrix. This study explores the physical characteristics of this composite for the first time. The structure of the composite was analyzed using x‐ray diffraction (XRD). Electrical properties and conductivity mechanisms were examined using a dielectric spectrometer. It was determined that the hopping model conductivity mechanism predominates in the FeGaInS4/PVA nanocomposite. For the 1 wt% FeGaInS4/PVA composite, system parameters were calculated at a temperature of 313 K and a frequency of 5 × 103 Hz. The parameters found are s = 0.814, potential barrier height WM = 0.868 eV, hopping length Rω = 14.7 × 10−10 m, and the concentration of pairs of states between, which charge carriers hop N = 1.396 × 1026 m−3.Highlights1 wt% FeGaInS4 composite synthesized via mechanical assembly.Small crystals boost dielectric constant by 1.5× via interfacial polarization.The system parameters are defined: s = 0.814, WM = 0.868 eV, Rω = 14.7 × 10−10 m.Electrical conduction is multifaceted; conductance hopping dominates.Loss tangent decreases due to interfacial polarization effects.