Local electronic interaction effects on electronic properties of tetragonal Germanene under bias voltage

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-06 DOI:10.1016/j.physe.2024.116098

H. Rezania , M. Abdi , B. Astinchap

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Abstract

We study the effects of a transverse magnetic field and bias voltage on the electronic properties of buckled tetragonal Germanene in the context of Hubbard model with ferromagnetic ordering. In particular, the behavior of density of states and temperature dependence of specific heat, thermoelectric properties and magnetic susceptibility have been investigated. Mean field approximation has been employed in order to obtain the effects of local coulomb interaction on the band structure of the system. Our results show the band gap in the density of states decreases with increase of bias voltage. Also the low temperature dependence of specific heat of tetragonal Germanene is found to be exponentially increasing behavior with temperature for all magnetic field and local coulomb interaction strength values. Seebeck coefficient shows an increasing behavior in terms of temperature with positive sign for all values of interaction strength. However Seebeck coefficient gets both positive and negative signs due to variation of transverse magnetic field strength in the absence of coulomb interaction and bias voltage.

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偏置电压下局部电子相互作用对四方锗烯电子特性的影响

我们以具有铁磁有序性的哈伯德模型为背景，研究了横向磁场和偏置电压对降压四方格尔曼烯电子特性的影响。我们特别研究了比热、热电性能和磁感应强度的状态密度行为和温度依赖性。为了获得局部库仑相互作用对系统带状结构的影响，我们采用了均场近似方法。研究结果表明，随着偏置电压的增加，状态密度的带隙会减小。此外，我们还发现，在所有磁场和局部库仑相互作用强度值下，四方日耳曼烯比热的低温依赖性随温度呈指数增长。在所有相互作用强度值下，塞贝克系数都随温度的升高而呈正值。然而，在没有库仑相互作用和偏置电压的情况下，横向磁场强度的变化会导致塞贝克系数出现正负两种符号。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures

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