Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe

IF 1.6 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER The European Physical Journal B Pub Date : 2024-09-03 DOI:10.1140/epjb/s10051-024-00771-8

T. G. Naghiyev, R. F. Babayeva, A. S. Abiyev

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Abstract

The effect of the external and intracrystalline factors (temperature, light, and the magnitude of the initial dark resistivity of the sample, electric field, chemical nature, and amount of the impurities) on the main characteristics of layered n-InSe crystals was investigated. The thermophoto-e.m.f. (TP-e.m.f.) was observed due to the heating of free charge carriers by an electric field. It has been established that the obtained experimental results differ significantly from spatially homogeneous semiconductors. This deviation increases with an increase in the value of the initial dark resistivity of the sample (ρ_D0) which depends nonmonotonically on the concentration of the impurity (N_REE). Undoped (with the lowest ρ_D0) and rare-earth-doped (N_REE ≥ 5·10^–2 at.%) samples were studied under all conditions, as well as at high T₀ and I₀, and it was determined that the TP-e.m.f. characteristics of hot current carriers (HCC) are the most stable and reproducible. The obtained results satisfactorily correlate with the provisions of the theory of TP-e.m.f. of HCC in spatially homogeneous semiconductors. The dependence of the characteristics of TP-e.m.f. of HCC from ρ_D0 and N_REE clearly explains the deviations compared to spatially homogeneous semiconductors considering the presence of random macroscopic defects in the samples.

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层状半导体 n-InSe 中电荷载流子受电场加热引起的 TP-e.m.f. 特性

研究了外部和晶体内部因素（温度、光、样品初始暗电阻率的大小、电场、化学性质和杂质数量）对层状 n-InSe 晶体主要特征的影响。由于电场对自由电荷载流子的加热作用，观察到了热光电迁移率（TP-e.m.f.）。实验证明，所获得的实验结果与空间均质半导体有显著差异。这种偏差随着样品初始暗电阻率 (ρD0)值的增加而增大，该值与杂质浓度 (NREE) 非单调相关。在所有条件下，以及在高 T0 和 I0 下，对未掺杂（ρD0 最低）和掺稀土（NREE ≥ 5-10-2 at.%）的样品进行了研究，结果表明，热电流载流子 (HCC) 的 TP-e.m.f. 特性最稳定、可重复。所获得的结果与空间均匀半导体中热流载流子的 TP-e.m.f. 理论相关性令人满意。HCC 的 TP-e.m.f. 特性与 ρD0 和 NREE 的关系清楚地解释了与空间均匀半导体相比的偏差，即样品中存在随机宏观缺陷。

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