Pauli spin blockade at room temperature in S/Zn-codoped silicon tunnel field effect transistors

Yoshisuke Ban, Kimihiko Kato, Shota Iizuka, Hiroshi Oka, Shigenori Murakami, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, Keiji Ono
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Abstract

Pauli spin blockade (PSB) has been used in fundamental studies on spins in quantum dots (QDs) and qubit readouts. The operating temperature of PSB is limited by that of QDs and remains below 10 K, limiting wide application development. Herein, we confirm that a single deep dopant in the channel of a field effect transistor functions as a room-temperature QD; consequently, transport through two different deep dopants exhibits PSB up to room temperature. The characteristic magnetoconductance provides a means to identify PSB and enables the PSB device to function as a magnetic sensor with a sensitivity of <20 uT. Liftings of PSB by magnetic resonance are also observed at low temperatures. This unique system is expected to realize room-temperature quantum technologies based on silicon technology.
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室温下 S/Zn 掺杂硅隧道场效应晶体管中的保利自旋封锁
保利自旋封锁(PSB)已被用于量子点(QDs)和量子位读出中的自旋基础研究。保利自旋封锁的工作温度受限于量子点的工作温度,一直低于 10 K,限制了其广泛应用。在此,我们证实场效应晶体管沟道中的单个深掺杂剂具有室温 QD 的功能;因此,通过两种不同深掺杂剂的传输可在室温下显示 PSB。特征磁导提供了一种识别 PSB 的方法,并使 PSB 器件能够用作磁传感器,灵敏度小于 20 uT。在低温下也能通过磁共振观察到 PSB 的升降。这一独特的系统有望在硅技术的基础上实现室温量子技术。
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