Strong Surface-Enhanced Coherent Phonon Generation in van der Waals Materials

IF 4.8 2区 化学 Q2 CHEMISTRY, PHYSICAL The Journal of Physical Chemistry Letters Pub Date : 2024-10-10 DOI:10.1021/acs.jpclett.4c02208
Christian Brennan, Alan G. Joly, Chih-Feng Wang, Ti Xie, Brian T. O’Callahan, Kevin Crampton, Alem Teklu, Leilei Shi, Ming Hu, Qian Zhang, Narayanan Kuthirummal, Hasitha Suriya Arachchige, Apoorva Chaturvedi, Hua Zhang, David Mandrus, Cheng Gong, Yu Gong
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Abstract

Terahertz (THz) coherent phonons have emerged as promising candidates for the next generation of high-speed, low-energy information carriers in atomically thin phononic or phonon-integrated on-chip devices. However, effectively manipulating THz coherent phonons remains a significant challenge. In this study, we investigated THz coherent phonon generation in exfoliated van der Waals (vdW) flakes of Fe3GeTe2, Fe5GeTe2, and FePS3. We successfully generated the THz A1g coherent phonon mode in these vdW flakes. An innovative approach involved partially exfoliating vdW flakes on a gold substrate and partially on a silicon (Si) substrate to compare the THz coherent phonon generation between both sides. Interestingly, we observed a significantly enhanced THz coherent phonon in the vdW/gold area compared with that in the vdW/Si area. Frequency-domain Raman mapping across the vdW flakes corroborated these findings. Numerical simulations further indicated a stronger enhanced surface field in vdW/gold structures than in vdW/Si structures. Consequently, we attribute the observed enhancement in THz coherent phonon generation to the increased surface field on the gold substrate. This enhancement was consistent across the three different vdW materials studied, suggesting the universality of this strategy. Our results hold promise for advancing the design of THz phononic and phonon-integrated devices.

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范德华材料中的强表面增强相干声子生成
太赫兹(THz)相干声子已成为下一代高速、低能信息载体的理想候选,可用于原子薄声子或集成声子的片上设备。然而,有效操纵太赫兹相干声子仍然是一项重大挑战。在本研究中,我们研究了在剥离的 Fe3GeTe2、Fe5GeTe2 和 FePS3 的范德华(vdW)薄片中产生太赫兹相干声子的情况。我们成功地在这些范德华片中产生了太赫兹 A1g 相干声子模式。一种创新方法是将 vdW 薄片部分剥离在金衬底上,部分剥离在硅(Si)衬底上,以比较两面的太赫兹相干声子产生情况。有趣的是,与 vdW/Si 区域相比,我们观察到 vdW/gold 区域的太赫兹相干声子明显增强。整个 vdW 薄片的频域拉曼图谱证实了这些发现。数值模拟进一步表明,与 vdW/Si 结构相比,vdW/金结构具有更强的增强表面场。因此,我们将观测到的太赫兹相干声子生成增强归因于金基底表面场的增强。在所研究的三种不同 vdW 材料中,这种增强效果都是一致的,这表明这种策略具有普遍性。我们的研究结果有望推动太赫兹声子和声子集成器件的设计。
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来源期刊
The Journal of Physical Chemistry Letters
The Journal of Physical Chemistry Letters CHEMISTRY, PHYSICAL-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
9.60
自引率
7.00%
发文量
1519
审稿时长
1.6 months
期刊介绍: The Journal of Physical Chemistry (JPC) Letters is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, chemical physicists, physicists, material scientists, and engineers. An important criterion for acceptance is that the paper reports a significant scientific advance and/or physical insight such that rapid publication is essential. Two issues of JPC Letters are published each month.
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