Li Xu, Haowei Liu, Jianmei Xu, Wei Zhou, Zhihong Yang, Wei Xu, Jian Sun
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引用次数: 0
Abstract
The exploitation of simply processed p-type semiconductors and photodetectors with promising optoelectrical properties remains challenging yet essential for current and future advanced optoelectronic applications. Transparent p-type CuI and Sn-doped CuI (Cu-Sn-I) films and their self-powered photodetectors have been successfully fabricated by the spraying method. It is found that the incorporation of Sn dopants enhances the optical, electrical, and photoelectric properties of CuI thin films as well as their corresponding self-powered heterojunction photodetectors. This improvement of the optoelectrical properties of the Cu-Sn-I film and its photodetector can be attributed to the adjustment of the acceptor defect level and increased hole concentration resulting from Sn doping. The Cu-Sn-I/n-Si photodetector exhibits a responsivity of 10.7 mA/W, a detectivity of 6.79 × 1011 Jones, and a response time of 77 μs/30 μs (0 V bias). The response time exhibits the fastest rise and decay times compared with the other CuI-based self-powered UV photodetectors in recent years, showcasing promising applications in the realm of transparent electronics moving forward. This study also presents an effective strategy for enhancing the electrical properties of p-type semiconductors and devices through effective doping.
开发具有良好光电特性的简单加工 p 型半导体和光电探测器仍然具有挑战性，但对于当前和未来的先进光电应用至关重要。通过喷涂方法，我们成功地制造出了透明的 p 型 CuI 和 Sn 掺杂 CuI（Cu-Sn-I）薄膜及其自供电光电探测器。研究发现，锡掺杂物的加入增强了 CuI 薄膜及其相应的自供电异质结光电探测器的光学、电学和光电特性。Cu-Sn-I 薄膜及其光电探测器光电特性的改善可归因于掺杂锡后受体缺陷水平的调整和空穴浓度的增加。Cu-Sn-I/n-Si 光电探测器的响应率为 10.7 mA/W，探测率为 6.79 × 1011 Jones，响应时间为 77 μs/30μs（0 V 偏置）。与近年来其他基于 CuI 的自供电紫外光检测器相比，其响应时间具有最快的上升和衰减时间，在透明电子学领域的应用前景十分广阔。这项研究还提出了一种通过有效掺杂来增强 p 型半导体和器件电气性能的有效策略。
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