Maximizing the Electromagnetic Efficiency of Spintronic Terahertz Emitters

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Photonics Research Pub Date : 2024-09-04 DOI:10.1002/adpr.202400064
Pierre Koleják, Geoffrey Lezier, Daniel Vala, Baptiste Mathmann, Lukáš Halagačka, Zuzana Gelnárová, Yannick Dusch, Jean-François Lampin, Nicolas Tiercelin, Kamil Postava, Mathias Vanwolleghem
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Abstract

Optically pumped spintronic terahertz emitters (STEs) have, in less than a decade, strongly impacted terahertz (THz) source technology, by the combination of their Fourier-limited ultrafast response, their phononless emission spectrum and their wavelength-independent operation. However, the intrinsic strength of the inverse spin Hall effect governing these devices introduces a challenge: the optical-to-terahertz conversion efficiency is considerably lower than traditional sources. It is therefore primordial to maximize at least their electromagnetic efficiency independently of the spin dynamics at play. Using a rigorous time-domain treatment of the electromagnetic generation and extraction processes, an optimized design is presented and experimentally confirmed. With respect to the strongest reported spintronic THz emitters it achieves a 250% enhancement of the emitted THz field and therefore an 8 dB increase of emitted power. This experimental achievement brings STE close to the symbolic barrier of mW levels. The design strategy is generically applicable to any kind of ultrafast spin-to-charge conversion (S2C) system. On a broader level, our work highlights how a rigorous handling of the purely electromagnetic aspects of THz spintronic devices can uncover overlooked aspects of their operation and lead to substantial improvements.

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最大化自旋电子太赫兹发射器的电磁效率
光泵浦自旋电子太赫兹发射器(STE)具有傅里叶限制的超快响应、无声子发射光谱和与波长无关的操作等特点,在不到十年的时间里对太赫兹(THz)信号源技术产生了重大影响。然而,制约这些设备的反自旋霍尔效应的内在强度带来了一个挑战:光到太赫兹的转换效率大大低于传统源。因此,在不考虑自旋动力学作用的情况下,至少最大限度地提高电磁效率是最基本的要求。通过对电磁产生和提取过程进行严格的时域处理,提出了一种优化设计,并得到了实验证实。与已报道的最强自旋电子太赫兹发射器相比,它实现了发射太赫兹场 250% 的增强,因此发射功率增加了 8 dB。这一实验成果使 STE 接近毫瓦级的象征性障碍。该设计策略一般适用于任何类型的超快自旋-电荷转换(S2C)系统。在更广泛的层面上,我们的工作突出了如何严格处理太赫兹自旋电子器件的纯电磁方面,从而发现其运行中被忽视的方面,并带来实质性的改进。
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