Structural and magnetic behavior of Mn-doped SnO2 nanorods for diluted magnetic semiconductors

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Applied Physics A Pub Date : 2024-11-11 DOI:10.1007/s00339-024-08022-4
K. S. Usha, G. Vijaya Prasath, Sang Yeol Lee
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Abstract

The electrical and magnetic properties of low-dimensional materials like nanorods with defect-free lattice structures are remarkable; yet, structural defects, whether introduced purposefully or inadvertently, significantly modify the magnetic property. Thus, the existence of various cation or anion vacancies and interstitials in SnO2 may alter their magnetic properties. In this study, Sn1 − xMnxO2 nanoparticles (x = 0.00, 0.02, 0.04, and 0.06) were synthesised using chemical co-precipitation. The XRD pattern shows that manganese (Mn) ions were successfully incorporated into the tetragonal rutile crystal structure of tin oxide (SnO2). The 445 cm− 1 band in FTIR spectra indicates Sn–O bond stretching vibrations. The SEM image of SnO2 shows that Mn inclusion forms nanorods. Sn, Mn, and O in EDX demonstrate the synthesized material’s purity. Photoluminescence peaks about 405 and 421 nm are caused by oxygen vacancies and tin interstitials. An X-ray photoemission spectroscopic analysis indicates a predominance of Sn4+ with a slight presence of Sn2+ valence states, attributed to oxygen vacancies, which leads to the formation of Mn4+ and Mn2+ states in the synthesized material. Mn doped SnO2 samples’ magnetization versus magnetic field (M–H) curves at ambient temperature showed that increasing Mn concentration from 2 to 6% effectively caused ferromagnetic behaviour owing to Mn ions’ dominant magnetic interaction. To get ferromagnetic characteristics in these materials, the Mn dopant concentration must be properly optimized. The ferromagnetic characteristics of pure and Mn-doped SnO2 diluted magnetic semiconductors have also been widely studied.

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用于稀释磁性半导体的掺锰二氧化锡纳米棒的结构和磁性行为
具有无缺陷晶格结构的纳米棒等低维材料的电学和磁学特性非常显著;然而,无论是有意还是无意引入的结构缺陷都会显著改变磁性能。因此,SnO2 中各种阳离子或阴离子空位和间隙的存在可能会改变其磁性能。本研究采用化学共沉淀法合成了 Sn1 - xMnxO2 纳米粒子(x = 0.00、0.02、0.04 和 0.06)。XRD 图谱显示,锰(Mn)离子成功地融入了氧化锡(SnO2)的四方金红石晶体结构中。傅立叶变换红外光谱中的 445 cm- 1 波段表示 Sn-O 键的伸缩振动。二氧化锡的扫描电镜图像显示,锰的加入形成了纳米棒。EDX 中的锡、锰和 O 证明了合成材料的纯度。405 和 421 纳米波长的光致发光峰是由氧空位和锡间隙引起的。X 射线光发射光谱分析表明,Sn4+ 价态占主导地位,而 Sn2+ 价态略有存在,这归因于氧空位,从而在合成材料中形成了 Mn4+ 和 Mn2+ 态。掺锰的二氧化锰样品在环境温度下的磁化与磁场(M-H)曲线显示,由于锰离子的磁相互作用占主导地位,将锰浓度从 2% 提高到 6%,可有效地产生铁磁性。要在这些材料中获得铁磁特性,必须适当优化掺杂锰的浓度。对纯二氧化锰和掺杂锰的二氧化锰稀磁半导体的铁磁特性也进行了广泛的研究。
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来源期刊
Applied Physics A
Applied Physics A 工程技术-材料科学:综合
CiteScore
4.80
自引率
7.40%
发文量
964
审稿时长
38 days
期刊介绍: Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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