A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 (Adv. Phys. Res. 1/2025)

Advanced Physics Research Pub Date : 2025-01-10 DOI:10.1002/apxr.202570001

Yi Peng, Xiang Li, Luchuan Shi, Guoqiang Zhao, Jun Zhang, Jianfa Zhao, Xiancheng Wang, Bo Gu, Zheng Deng, Yasutomo J. Uemura, Changqing Jin

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Abstract

Room-temperature ferromagnetism in diluted magnetic semiconductors

Diluted magnetic semiconductors (DMS), which combine the advantages of carrier processes in semiconductors and spin storage in ferromagnets, have significant impacts on generating brand new information technologies. However, achieving room-temperature ferromagnetism in a controllable mode for DMS is a major challenge. In article number 2400124, Bo Gu, Zheng Deng, Changqing Jin and co-workers report experimental enhancement of T_C to a record 260 K for the new-generation DMS material (Ba,K)(Zn,Mn)₂As₂ (or “BZA”) through high-pressure synthesis that effectively optimizes spin and charge doping.

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Advanced Physics Research

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