{"title":"High-power GeSn photodetector for 2-μm RoF system","authors":"Jinlai Cui, Jun Zheng, Xiangquan Liu, Yiyang Wu, Jiayi Li, Qinxing Huang, Yuhua Zuo, Zhi Liu, Buwen Cheng","doi":"10.1063/5.0250619","DOIUrl":null,"url":null,"abstract":"A radio-over-fiber (RoF) link simplifies the base station and network structure, adapting to the trends of high capacity and rapid development in modern communication. The development of 2-μm-band links improves the capacity of communication systems, which can solve future optical fiber capacity crises. In this work, a relaxed high-Sn-content GeSn absorption layer was grown on a Si substrate, and high-power GeSn photodetectors were fabricated. The photodetectors achieved a low dark current with a cutoff wavelength of about 2930 nm. The GeSn photodetectors had a saturated photocurrent of up to 70 mA operating in the 2-μm-wavelength range and a 3-dB bandwidth of approximately 1.6 GHz. The results provide a technical reference for the application of GeSn 2-μm detectors in RoF links.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0250619","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
A radio-over-fiber (RoF) link simplifies the base station and network structure, adapting to the trends of high capacity and rapid development in modern communication. The development of 2-μm-band links improves the capacity of communication systems, which can solve future optical fiber capacity crises. In this work, a relaxed high-Sn-content GeSn absorption layer was grown on a Si substrate, and high-power GeSn photodetectors were fabricated. The photodetectors achieved a low dark current with a cutoff wavelength of about 2930 nm. The GeSn photodetectors had a saturated photocurrent of up to 70 mA operating in the 2-μm-wavelength range and a 3-dB bandwidth of approximately 1.6 GHz. The results provide a technical reference for the application of GeSn 2-μm detectors in RoF links.
期刊介绍：
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
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