Correction: HfO2-based ferroelectric synaptic devices: challenges and engineering solutions
Taegyu Kwon, Hyeong Seok Choi, Dong Hyun Lee, Dong Hee Han, Yong Hyeon Cho, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Taehwan Moon and Min Hyuk Park
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Abstract
Correction for ‘HfO2 -based ferroelectric synaptic devices: challenges and engineering solutions’ by Taegyu Kwon et al. , Chem. Commun. , 2025, 61 , 3061–3080, https://doi.org/10.1039/d4cc05293e.
修正:基于hfo2的铁电突触器件:挑战和工程解决方案
对Taegyu Kwon等人的“基于hfo2的铁电突触装置:挑战和工程解决方案”的修正,化学。Commun。, 2025, 61, 3061-3080, https://doi.org/10.1039/d4cc05293e。
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