Shunt Resistance Determination in a Silicon Solar Cell: Effect of Flow Irradiation Energy and Base Thickness

Ousmane Sow, Mamadou Lamine Ba, Hamet Yoro Ba, Mohamed Abderrahim Ould El Moujtaba, Youssou Traoré, Masse Samba Diop, Habiboullah Lemrabott, M. Wade, G. Sissoko
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Abstract

The concept of the recombination of the minority carrier’s recombination velocity at the junction and in the rear, is used for determination, optimum thickness and then shunt resistance in the base of the silicon solar cell, maintained in steady state and under energy from the irradiation flow of charged particles. Resistance shunt is obtained and modeled through a relationship expressed according to the flow and energy of irradiation imposed on the solar cell.
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硅太阳能电池分流电阻的测定:流动辐照能量和基底厚度的影响
少数载流子在结和背面的复合速度的概念被用于确定硅太阳能电池的基底中的最佳厚度和分流电阻,该基底在带电粒子的辐射流的能量下保持稳定状态。电阻分流器是通过根据施加在太阳能电池上的辐射的流量和能量表达的关系来获得和建模的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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