I. M. Pleshanov, Daniyar Sherimov, A. Belorus, V. Koshevoi, O. I. Gorchakov
{"title":"Mathematical Modeling of the Fabry-Perot Interferometer Based on Silicon Plates for Application in Microfluid Sensor Devices","authors":"I. M. Pleshanov, Daniyar Sherimov, A. Belorus, V. Koshevoi, O. I. Gorchakov","doi":"10.1109/eiconrus.2019.8657197","DOIUrl":null,"url":null,"abstract":"In the Mathcad 15 software environment, a 4-mirror Fabry-Perot interferometer for use as a refractive index sensor was simulated. The transmission spectra for various analytes and gaps between silicon wafers are considered and calculated. Optimal areas of maximum sensor sensitivity were determined. As a result of the optimization, sensitivity to a change of the refractive index of up to 1900 nm / RIU was obtained. The perspective of using such a sensor in microfluidic devices is shown.","PeriodicalId":6748,"journal":{"name":"2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","volume":"38 8","pages":"911-913"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/eiconrus.2019.8657197","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In the Mathcad 15 software environment, a 4-mirror Fabry-Perot interferometer for use as a refractive index sensor was simulated. The transmission spectra for various analytes and gaps between silicon wafers are considered and calculated. Optimal areas of maximum sensor sensitivity were determined. As a result of the optimization, sensitivity to a change of the refractive index of up to 1900 nm / RIU was obtained. The perspective of using such a sensor in microfluidic devices is shown.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
