ALD grown absorber materials for bulk heterojunction solar cells

Neha Mahuli, S. Sarkar
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Abstract

In this report we have discussed the need of conformal deposition of the low bandgap materials as absorber in solid-state bulk heterojunction devices. We demonstrated ALD grown Sb2S3 and TiSx thin films for photovoltaic applications. The deposition mechanism was studied in depth using in-situ quartz crystal microbalance (QCM). Need of modified reactor configuration for the uniform deposition of the material throughout the depth of the mesoporous host was discussed with elaborated comparative results for various absorber material device configurations.
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体异质结太阳能电池用ALD生长吸收材料
在本报告中,我们讨论了低带隙材料的共形沉积作为吸收剂在固态体异质结器件中的必要性。我们展示了ALD生长的Sb2S3和TiSx薄膜用于光伏应用。利用原位石英晶体微天平(QCM)对沉积机理进行了深入研究。讨论了改进反应器结构的必要性,以使材料在介孔宿主体的整个深度均匀沉积,并详细比较了各种吸收材料装置结构的结果。
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