Evidence of Buried Junction in CdSeTe Absorbers

Abstract

The introduction of Se induced band gap gradients have been shown to be a promising path for improving CdTe devices. Controlling maximum selenium concentration during deposition should allow for better device performance. In this work electron beam induced current maps were measured for CdSeTe/CdTe devices with as-grown selenium concentration between 0 and 20 percent. Results show a collection profile which has not been seen before in similar devices. EBIC results and several interpretations are presented.