Chenggong Yin, Xi Song, Xinchuan Zhang, Mengjie Zhou, Yongsheng Zhang, N. Zhang, Y. Pei
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引用次数: 2
Abstract
This paper demonstrates a 180W packaged AlGaN/GaN HEMT targeted for S-band application, operating at 48V drain bias voltage. Under WCDMA (with DPD) test, the average power and drain efficiency are 35W and 33.3%. After 1000 hours HTRB test, no electrical failure of the device is observed.
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