RF and noise characterization of a monolithically integrated receiver on InP

U. Feiste, R. Kaiser, G. Mekonnen, C. Schramm, D. Trommer, G. Unterborsch
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Abstract

A comprehensive characterization of an optoelectronic integrated circuit (OEIC) receiver that uses an optical waveguide is given. Bias dependent signal and noise measurements show that the gain-bandwidth product increases from 1.4 GHz at zero bias operation to 2.7 GHz at the optimum bias voltages. The receiver input noise is dominated by the JFET channel noise. Using an equivalent circuit model for the receiver, agreement between the calculated and the measured data was found. From the measured input noise, an optical sensitivity of -29 dBm was evaluated at a bit rate of 576 Mb/s (BER=10/sup -9/).<>
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InP上单片集成接收机的射频和噪声特性
给出了一种使用光波导的光电集成电路(OEIC)接收器的综合特性。偏置相关的信号和噪声测量表明,增益带宽积从零偏置工作时的1.4 GHz增加到最佳偏置电压下的2.7 GHz。接收端输入噪声主要由JFET通道噪声控制。利用等效电路模型对接收机进行了计算,结果与实测数据吻合。根据测量的输入噪声,在比特率为576mb /s (BER=10/sup -9/)时,评估了- 29dbm的光学灵敏度。
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Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics High speed InGaAs HBT devices and circuits High performance diffused InGaAs JFETs in OEICs Current-controlled liquid phase epitaxy of InAsP on InP substrates High power and high temperature operation of 1.5 mu m wavelength strained-layer InGaAs/InGaAsP SIPBH lasers
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