Semi-insulating behavior of Cu doped InP

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147413

R. Leon, M. Kamińska, Z. Liliental-Weber, K. Yu, M. Chandramouli, E. Weber

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引用次数: 1

Abstract

Results from electrical measurements, as well as lattice site determination, structural, and X-ray energy dispersive studies of Cu doping on InP, are presented. Hall measurements of carrier concentration as a function of inverse temperature show that InP:Cu exhibits semi-insulating behavior after diffusion with Cu at temperatures exceeding 700 degrees C. Similar measurements of carrier concentration and mobility show that samples exhibited properties typical of hopping conductivity when diffused at temperatures below 700 degrees C. Particle induced X-ray emission (PIXE) performed with channeling in the <110>, <100>, and <111> directions shows a random distribution of Cu, which is typically seen when precipitates are present. Transmission electron microscopy (TEM) indicates the presence of numerous small spherical crystalline precipitates in the samples, and microdiffraction and energy dispersion spectroscopy (EDS) analysis indicates that the most probable phase of these precipitates is In/sub x/Cu.<>

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Cu掺杂InP的半绝缘性能

本文介绍了铜在InP上掺杂的电测量结果、晶格位置测定、结构和x射线能量色散研究。载流子浓度随温度变化的霍尔测量结果表明，InP:Cu在超过700℃的温度下与Cu扩散后表现出半绝缘行为。载流子浓度和迁移率的类似测量结果表明，样品在低于700℃的温度下扩散时表现出典型的跳变电导率特性。方向显示铜的随机分布，这是沉淀存在时的典型特征。透射电镜(TEM)分析表明，样品中存在大量细小的球形结晶相，微衍射和能谱分析(EDS)表明，这些析出相最有可能是in /sub x/Cu。

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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