{"title":"Super High Frequency Lateral-Field-Excited Aluminum Nitride Cross-Sectional Lamé Mode Resonators","authors":"Guofeng Chen, Flavius V. Pop, M. Rinaldi","doi":"10.1109/TRANSDUCERS.2019.8808381","DOIUrl":null,"url":null,"abstract":"This paper reports on the first demonstration of super high frequency (SHF) lateral-field-excited (LFE) aluminum nitride (AlN) cross-sectional Lamé mode resonators (CLMRs). A simple 2-mask process was used to fabricate LFE AlN CLMRs operating at 4.2 GHz with an electromechanical-coupling coefficient kt2 of 1.2 %, providing > 20 MHz filter bandwidth. Anchor loss is reduced to provide 2X higher quality factor (Qm > 1150) implemented with a small termination impedance of 160 Ω. Such important features render AlN LFE CLMRs promising candidates for low-cost yet high-performance wireless communication technologies, such as LTE‐Advanced contiguous carrier aggregation which requires up to 20 MHz bandwidth.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"02 1","pages":"539-542"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2019.8808381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
This paper reports on the first demonstration of super high frequency (SHF) lateral-field-excited (LFE) aluminum nitride (AlN) cross-sectional Lamé mode resonators (CLMRs). A simple 2-mask process was used to fabricate LFE AlN CLMRs operating at 4.2 GHz with an electromechanical-coupling coefficient kt2 of 1.2 %, providing > 20 MHz filter bandwidth. Anchor loss is reduced to provide 2X higher quality factor (Qm > 1150) implemented with a small termination impedance of 160 Ω. Such important features render AlN LFE CLMRs promising candidates for low-cost yet high-performance wireless communication technologies, such as LTE‐Advanced contiguous carrier aggregation which requires up to 20 MHz bandwidth.
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