Locality-Aware Stencil Computations Using Flash SSDs as Main Memory Extension

H. Midorikawa, Hideyuki Tan
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引用次数: 8

Abstract

This paper investigates the performance of flash solid state drives (SSDs) as an extension to main memory with a locality-aware algorithm for stencil computations. We propose three different configurations, swap, m map, and aio, for accessing the flash media, with data structure blocking techniques. Our results indicate that hierarchical blocking optimizations for three tiers, flash SSD, DRAM, and cache, perform satisfactorily to bridge the DRAM-flash latency divide. Using only 32 GiB of DRAM and a flash SSD, with 7-point stencil computations for a 512 GiB problem (16 times that of the DRAM), 87% of the Mflops execution performance achieved with DRAM only was attained.
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基于Flash ssd的位置感知模板计算
本文研究了flash固态硬盘(ssd)作为主存储器的扩展,使用位置感知算法进行模板计算的性能。我们提出了三种不同的配置,swap、m map和aio,用于使用数据结构阻塞技术访问闪存介质。我们的研究结果表明,闪存SSD、DRAM和缓存这三层的分层阻塞优化在弥合DRAM-闪存延迟鸿沟方面表现令人满意。仅使用32gb的DRAM和一个闪存SSD,对512 gb的问题进行7点模板计算(是DRAM的16倍),实现了仅使用DRAM时所达到的87%的Mflops执行性能。
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