Complementary metamaterial infrared absorber

Prakash Pitchappa, C. Ho, P. Kropelnicki, Chengkuo Lee
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引用次数: 1

Abstract

Complementary metamaterial based infrared (IR) absorber using complementary metal oxide semiconductor (CMOS) compatible material is presented. The robustness of the proposed device is ensured by studying the effect of fabrication deviation on the device performance. The measured absorption was 70% in the near IR region. The complementary metamaterial absorber can be engineered to provide near unity absorption in IR region.
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互补超材料红外吸收剂
介绍了一种基于互补金属氧化物半导体(CMOS)兼容材料的互补超材料红外吸收材料。通过研究制造偏差对器件性能的影响,保证了所提出器件的鲁棒性。在近红外区测得的吸收率为70%。互补的超材料吸收器可以设计成在红外区域提供接近统一的吸收。
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