{"title":"高功率波导集成分布式吸收光电二极管","authors":"H. Jiang, P. Yu","doi":"10.1109/MWSYM.2000.863274","DOIUrl":null,"url":null,"abstract":"A novel implementation of a vertically coupled, 1.3 /spl mu/m wavelength waveguide integrated InGaAs photodiode with distributed absorption is proposed using an index matching layer that can improve optical saturation power, responsivity and bandwidth. Waveguide photodiode made with this design shows a RF 1-dB compression point up to 10.2 mA at 20 GHz with CW optical power. Furthermore, the device has a 47 GHz 3-dB bandwidth, and 0.4 A/W microwave responsivity at 20 GHz without anti-reflection coating.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"High-power waveguide integrated photodiode with distributed absorption\",\"authors\":\"H. Jiang, P. Yu\",\"doi\":\"10.1109/MWSYM.2000.863274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel implementation of a vertically coupled, 1.3 /spl mu/m wavelength waveguide integrated InGaAs photodiode with distributed absorption is proposed using an index matching layer that can improve optical saturation power, responsivity and bandwidth. Waveguide photodiode made with this design shows a RF 1-dB compression point up to 10.2 mA at 20 GHz with CW optical power. Furthermore, the device has a 47 GHz 3-dB bandwidth, and 0.4 A/W microwave responsivity at 20 GHz without anti-reflection coating.\",\"PeriodicalId\":149404,\"journal\":{\"name\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2000.863274\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.863274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-power waveguide integrated photodiode with distributed absorption
A novel implementation of a vertically coupled, 1.3 /spl mu/m wavelength waveguide integrated InGaAs photodiode with distributed absorption is proposed using an index matching layer that can improve optical saturation power, responsivity and bandwidth. Waveguide photodiode made with this design shows a RF 1-dB compression point up to 10.2 mA at 20 GHz with CW optical power. Furthermore, the device has a 47 GHz 3-dB bandwidth, and 0.4 A/W microwave responsivity at 20 GHz without anti-reflection coating.
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