D. Koziarskyi, E. Maistruk, I. Koziarskyi, G. O. Andrushchak
{"title":"光敏ZnO/Si异质结构随温度变化的电学特性","authors":"D. Koziarskyi, E. Maistruk, I. Koziarskyi, G. O. Andrushchak","doi":"10.1117/12.2616088","DOIUrl":null,"url":null,"abstract":"The transmission spectra of ZnO:Al films and I-V-characteristic of the isotype heterojunction ZnO:Al/n-Si fabricated by the method of RF magnetron sputtering of thin ZnO:Al films onto n-Si crystalline substrates were investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse biases are analyzed. The influence of temperature on the parameters of the heterojunction is determined. The photoelectric properties of the heterostructure are analyzed.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical properties of photosensitive ZnO/Si heterostructure depending on temperature\",\"authors\":\"D. Koziarskyi, E. Maistruk, I. Koziarskyi, G. O. Andrushchak\",\"doi\":\"10.1117/12.2616088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The transmission spectra of ZnO:Al films and I-V-characteristic of the isotype heterojunction ZnO:Al/n-Si fabricated by the method of RF magnetron sputtering of thin ZnO:Al films onto n-Si crystalline substrates were investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse biases are analyzed. The influence of temperature on the parameters of the heterojunction is determined. The photoelectric properties of the heterostructure are analyzed.\",\"PeriodicalId\":250235,\"journal\":{\"name\":\"International Conference on Correlation Optics\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Correlation Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2616088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Correlation Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2616088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical properties of photosensitive ZnO/Si heterostructure depending on temperature
The transmission spectra of ZnO:Al films and I-V-characteristic of the isotype heterojunction ZnO:Al/n-Si fabricated by the method of RF magnetron sputtering of thin ZnO:Al films onto n-Si crystalline substrates were investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse biases are analyzed. The influence of temperature on the parameters of the heterojunction is determined. The photoelectric properties of the heterostructure are analyzed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
