用于神经细胞阵列的CMOS双边线性浮动电阻器

Conference Record of the Thirty-First Asilomar Conference on Signals, Systems and Computers (Cat. No.97CB36136) Pub Date : 1997-11-02 DOI:10.1109/ACSSC.1997.679082

L. Sellami, S.K. Singh, R. Newcomb, A. Rasmussen, M. Zaghloul

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引用次数: 2

摘要

利用第一种结构中的双晶体管CMOS双边线性电阻和第二种结构中的两个双晶体管CMOS双边线性电阻和电流镜的结构，将先前的CMOS双边线性电阻修改为两种不同配置的浮动电阻。利用MOSIS晶体管参数的仿真结果验证了该理论。这些浮动电阻器可用于VLSI神经型单元阵列中的耦合权重。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CMOS bilateral linear floating resistors for neural-type cell arrays

A previous CMOS bilateral linear resistor is modified into two different configurations of floating resistors using the structure of a two-transistor CMOS bilateral linear resistor in the first configuration and two two-transistor CMOS bilateral linear resistors and current mirrors in the second configuration. Simulation results using parameters of MOSIS transistors are presented to verify the theory. These floating resistors can be used for coupling weights in VLSI neural-type cell arrays.

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Conference Record of the Thirty-First Asilomar Conference on Signals, Systems and Computers (Cat. No.97CB36136)

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