{"title":"100-200 GHz CMOS信号源和检测器","authors":"K. O, C. Cao, E. Seok, S. Sankaran","doi":"10.1109/CSICS07.2007.61","DOIUrl":null,"url":null,"abstract":"The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"100-200 GHz CMOS Signal Sources and Detectors\",\"authors\":\"K. O, C. Cao, E. Seok, S. Sankaran\",\"doi\":\"10.1109/CSICS07.2007.61\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.\",\"PeriodicalId\":370697,\"journal\":{\"name\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS07.2007.61\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.61","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.
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