Andreas Beling, D. Schmidt, H. Bach, G. Mekonnen, R. Ziegler, V. Eisner, M. Stollberg, G. Jacumeit, E. Gottwald, C. Weiske
{"title":"基于InP的45 GHz带宽高功率1550 nm双光电探测器模块","authors":"Andreas Beling, D. Schmidt, H. Bach, G. Mekonnen, R. Ziegler, V. Eisner, M. Stollberg, G. Jacumeit, E. Gottwald, C. Weiske","doi":"10.1109/OFC.2002.1036357","DOIUrl":null,"url":null,"abstract":"In summary we fabricated and characterized integrated differential photodetector modules with 35 GHz and 45 GHz electrical bandwidth. The devices show total responsivities of 0.41 A/W and 0.31 A/W respectively and PDL of less than 0.5 dB. The ratio of the photocurrents remains below 0.5 dB for different states of polarization demonstrating an excellent electrical and optical symmetry. The modules deliver high electrical output pulses of differential polarity in the 1 Volt regime to switch directly all known 40 Gbit/s demux electronics implemented in SiGe, GaAs or InP technology.","PeriodicalId":347952,"journal":{"name":"Optical Fiber Communication Conference and Exhibit","volume":"231 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"High power 1550 nm twin-photodetector modules with 45 GHz bandwidth based on InP\",\"authors\":\"Andreas Beling, D. Schmidt, H. Bach, G. Mekonnen, R. Ziegler, V. Eisner, M. Stollberg, G. Jacumeit, E. Gottwald, C. Weiske\",\"doi\":\"10.1109/OFC.2002.1036357\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In summary we fabricated and characterized integrated differential photodetector modules with 35 GHz and 45 GHz electrical bandwidth. The devices show total responsivities of 0.41 A/W and 0.31 A/W respectively and PDL of less than 0.5 dB. The ratio of the photocurrents remains below 0.5 dB for different states of polarization demonstrating an excellent electrical and optical symmetry. The modules deliver high electrical output pulses of differential polarity in the 1 Volt regime to switch directly all known 40 Gbit/s demux electronics implemented in SiGe, GaAs or InP technology.\",\"PeriodicalId\":347952,\"journal\":{\"name\":\"Optical Fiber Communication Conference and Exhibit\",\"volume\":\"231 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Fiber Communication Conference and Exhibit\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OFC.2002.1036357\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Fiber Communication Conference and Exhibit","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OFC.2002.1036357","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High power 1550 nm twin-photodetector modules with 45 GHz bandwidth based on InP
In summary we fabricated and characterized integrated differential photodetector modules with 35 GHz and 45 GHz electrical bandwidth. The devices show total responsivities of 0.41 A/W and 0.31 A/W respectively and PDL of less than 0.5 dB. The ratio of the photocurrents remains below 0.5 dB for different states of polarization demonstrating an excellent electrical and optical symmetry. The modules deliver high electrical output pulses of differential polarity in the 1 Volt regime to switch directly all known 40 Gbit/s demux electronics implemented in SiGe, GaAs or InP technology.
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