G. Amendola, L. Boccia, F. Centurelli, W. Ciccognani, E. Limiti, C. Mustacchio, P. Tommasino, A. Trifiletti
{"title":"BiCMOS技术中e波段变增益放大器的面向特性设计","authors":"G. Amendola, L. Boccia, F. Centurelli, W. Ciccognani, E. Limiti, C. Mustacchio, P. Tommasino, A. Trifiletti","doi":"10.1109/mms55062.2022.9825549","DOIUrl":null,"url":null,"abstract":"Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E- Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.","PeriodicalId":124088,"journal":{"name":"2022 Microwave Mediterranean Symposium (MMS)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology\",\"authors\":\"G. Amendola, L. Boccia, F. Centurelli, W. Ciccognani, E. Limiti, C. Mustacchio, P. Tommasino, A. Trifiletti\",\"doi\":\"10.1109/mms55062.2022.9825549\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E- Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.\",\"PeriodicalId\":124088,\"journal\":{\"name\":\"2022 Microwave Mediterranean Symposium (MMS)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Microwave Mediterranean Symposium (MMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/mms55062.2022.9825549\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Microwave Mediterranean Symposium (MMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mms55062.2022.9825549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology
Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E- Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.
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