电可擦EEPROM存储单元的结构设计

Lei Zhao
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引用次数: 3

摘要

EEPROM是一种可电擦除的可编程存储器。该技术成熟稳定,成本低,是日常生活中电子产品应用的主流。人们以各种方式使用它。在个人身份证、银行卡、医保卡、交通卡等与个人财产密切相关的智能卡领域,以及在通信系统和PDA、数码相机等其他消费电子产品领域,都使用到了EEPROM。在仪器和其他嵌入式系统中,例如智能流量计,通常需要存储设置参数、现场数据等信息,这些信息要求系统在断电时不丢失,以便下次可以恢复您最初设置的数据。因此,EEPROM有一定的容量。通过在存储单元的浮栅管上存储或释放电子,读取浮栅管时存储器出现开或关,因此判断其逻辑值为“0”或“1”。逻辑“0”或“1”的定义取决于产品的逻辑设计。本文设计了一种由两个晶体管组成的存储单元。NMOS管用作选择管,由字线控制。它可以承受部分高压,降低浮栅晶体管超薄氧化层击穿的概率。本文设计的EEPROM器件模型作为存储管,可以很好地通过隧道氧化层进行数据存储,实现了更好的存储功能、更高的工作效率和更低的功耗。
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Structural Design of an Electrically Erasable EEPROM Memory Cell
EEPROM is an electrically erasable and programmable memory. The technology is mature and stable with low cost, so it is the mainstream in the application of electronic products in daily life. People use it in every way. In the fields of personal identity card, bank card, medical insurance card, traffic card and other smart cards, which are closely related to personal property, and in the field of communication system and other consumer electronic products such as PDA and digital camera, EEPROM is used. In instruments and other embedded systems, such as smart flowmeters, it is usually necessary to store information such as setting parameters, field data, etc., which requires that the system is not lost when it is powered down so that the data you originally set could be restored next time. Therefore, a certain capacity of EEPROM. Through the storage or release of electrons on the floating gate tube of the memory cell, the memory appears to be on or off when the floating gate tube is read, so its logic value will be judged as “0” Or “1”. The definition of logic “0” or “1” varies depending on the logical design of the product. This work designs a memory cell consisting of two transistors. The NMOS tube is used as a selection tube and controlled by the word line. It can withstand a part of the high voltage and reduce the probability of breakdown of the ultra-thin oxide layer of the floating gate transistor. As a storage tube, the EEPROM device model designed in this paper can work well through the tunnel oxide layer to store data, achieving better storage functions, higher work efficiency, and lower power consumption.
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